Continuous good step coverage cvd platinum metal deposition

ABSTRACT

A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas over an organic platinum based metal precursor until the non-reactive gas is saturated with the precursor. The platinum based metal film is deposited onto a substrate in a CVD deposition chamber in the presence of both oxygen and nitrous oxide at a predetermined temperature and under a predetermined pressure. The resulting film is consistently smooth and has good step coverage.

FIELD OF THE INVENTION

[0001] The invention relates generally to the chemical vapor deposition(CVD) of platinum group metals on an integrated circuit structure as acontinuous film and with good step coverage. The invention also relatesto integrated circuits having a platinum group metal layer, used, forexample, as the lower electrode in a capacitor.

DISCUSSION OF RELATED ART

[0002] Because of their high corrosion resistance, microelectronicdevices having platinum group metals are desired in applications wheregreat reliability is desired and also where a corrosive atmosphere maybe present. It is desired to develop a process for continuous good stepcoverage using platinum group metals.

[0003] The invention relates to the formation of a continuous film layerof platinum group metal by CVD. The invention may find many uses where athin uniform layer of platinum group metal is needed. For example, theinvention is useful in the computer microchip industry, such as for theundercoating electrode of a dielectric memory in a semiconductor device.The invention relates to a chemical vapor deposition method to depositthe platinum group metal onto a surface. The starting material forpreparation of the platinum group metal film may be any organic platinumgroup metal precursor suitable for deposition of the platinum groupmetal.

[0004] Unfortunately, the conventional methods of depositing platinumfilms suffer drawbacks in that these methods are unable to consistentlycreate a continuous uniformly thin platinum film that additionally hasgood step coverage.

[0005] These conventional prior methods include vacuum depositionmethods, sputtering methods and even chemical vapor deposition. Even inthe conventional chemical vapor deposition methods it is difficult tocreate a continuous uniform platinum film and one with good stepcoverage.

[0006] This is likely due to the fact that when conventional platinumprecursors are used in the conventional chemical vapor depositionmethods, it is difficult to control the nucleation rate of the platinumfilms. At the outset of the platinum deposition process, the nucleationrate of the platinum film onto the surface of the substrate is veryslow; however, once nucleation does begin the deposition rate of theplatinum film onto the surface increases significantly. In fact, it isdifficult to control or even slow the rate of deposition once theconventional methods begin depositing platinum onto the surface of thesubstrate. In the conventional methods therefore, it is difficult tobegin the deposition process and even more difficult to control thedeposition rate so as to arrive at a uniform thin platinum film havinggood step coverage.

[0007] In semiconductor processing, controlling the rate of depositionof a film is one important characteristic to a processing method. Theconventional platinum deposition methods are unable to consistentlycontrol the deposition rate of the platinum film so as to consistentlyarrive at a platinum film that has sufficient physical properties to beuseful in integrated circuits.

[0008] One example of the use of a platinum metal according to theconventional methods is discussed with reference to FIG. 12. A platinumlayer 210 is deposited onto the surfaces of a deep container capacitor200. The platinum layer 210 is formed by CVD deposition using aconventional platinum precursor. As the process begins, a platinum film210 forms on the upper layer 220 of the capacitor 200. Since it isdifficult to control the deposition rate of the platinum layer 210, theplatinum layer 210 quickly forms a thick layer on the upper layer 220 ofthe capacitor 200. As a result, the quickly formed platinum layer 210pinches together over the opening 230 in the capacitor 200 and verylittle platinum is able to form on the inside walls 240 or the bottom250 of the capacitor 200. Thus, in this process, an inconsistentplatinum film is formed on the inside walls 240 and the bottom 250 ofthe capacitor 200 without good step coverage.

[0009] One prior solution to increase the smoothness of the filmdeposited was to increase the temperature at which the metal isdeposited. When the temperature at which the conventional CVD processoperates is increased, the growth rate of the platinum also increases.While increasing the temperature does result in a smoother film, theincreased temperature also increases the deposition rate, resulting inpoor step coverage, as previously described. If the temperature of theCVD process is decreased, the growth rate of the platinum alsodecreases, resulting in better step coverage; however, when thetemperature of the CVD process is decreased the carbon content of thefilm increases, resulting in poor film quality.

[0010] To reduce the carbon content of the film, the conventionalmethods added oxygen to the CVD process. The oxygen removed some of thecarbon from the platinum film; however, the oxygen also increased thedeposition rate of the platinum resulting in a film similar to the hightemperature deposited film described above. Thus, the conventionalmethods are unable to achieve both good step coverage and a smoothcontinuous film, which is especially important in the manufacture of anintegrated circuit.

SUMMARY OF THE INVENTION

[0011] The present invention overcomes the drawbacks of the conventionalmethods and provides a CVD method that produces a smooth, uniform,continuous film of a platinum group metal that also has good stepcoverage. The invention includes the addition of nitrous oxide (N₂O) andoxygen in combination as a component during the CVD process in order tocontrol the deposition rate of the platinum group metal, which resultsin a continuous film having good step coverage.

[0012] The invention provides a process for depositing a platinum metalon a substrate which includes the steps of flowing a gas havingsaturated therein a platinum precursor over the substrate at a selectedtemperature and pressure in the presence of both oxygen (O₂) and nitrousoxide (N₂O). The selected operating temperature is a temperature atwhich the platinum group metal deposits on the substrate, but less thana temperature at which the platinum group metal fails to smoothlydeposit on the substrate. The pressure at which the process operates isa pressure at which the platinum group metal will deposit on thesubstrate in a continuous film while maintaining good step coverage. Bycarrying out this process, a platinum group metal film may be depositedon the exposed portions of the substrate in a uniform film.

[0013] The above and other advantages and features of the invention willbe more clearly understood from the following detailed description whichis provided in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014]FIG. 1 is a schematic view of one embodiment of an apparatus usedin the present invention.

[0015]FIG. 2 is a microscopic photograph of a platinum film deposited onsilicon (Si) according to a method of the present invention.

[0016]FIG. 3 is a microscopic photograph of a platinum film deposited onSi according to a conventional method.

[0017]FIG. 4 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at an early processing step according to oneembodiment of the present invention.

[0018]FIG. 5 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 4.

[0019]FIG. 6 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 5.

[0020]FIG. 7 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 6.

[0021]FIG. 8 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 7.

[0022]FIG. 9 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 8.

[0023]FIG. 10 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 9 showing a platinum lower electrode.

[0024]FIG. 11 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 10.

[0025]FIG. 12 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer with a platinum layer deposited according to theconventional methods.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] The platinum group metals which can be deposited onto the surfaceof a substrate according to the present invention include Ru, Rh, Pd,Os, Ir or Pt or mixture thereof. These platinum group metals aredeposited by bubbling an organic platinum group metal precursorcontaining the desired platinum group metal into a non-reactive flowgas. Preferably the platinum group metal is platinum.

[0027] The organic platinum group metal precursor may be any suitableorganic compound which will allow the metal to deposit from the gasphase onto a substrate under CVD conditions. The organic precursor aremay be, for example, cyclopentadienyl trimethylplatinum (IV),(C₅H₅)Pt(CH₃)₃, (hereinafter abbreviated as “(Cp)PtTM”) or a derivativethereof such as, methylcyclopentadienyl trimethylplatinumCH₃(C₅H₅)Pt(CH₃)₃ (hereinafter abbreviated as “Me(Cp)PtTM,” platinumbeta-diketonates, platinum bis-(acetyl-acetonate), dimethyl platinumcyclopentadienide or dialkyl platinum dienes. Preferably the organicplatinum precursors are (Cp)PtTM or Me(Cp)PtTM. Suitable organicprecursors for the Ru, Rh, Pd, Os and Ir metals may also be used.

[0028] The carrier gas into which the organic platinum group precursoris bubbled may be any suitable gas, preferably a non-reactive gas. Thepurpose of the carrier gas is to transport the organic platinum groupprecursor to the CVD deposition chamber in gaseous form so that themetal can be deposited onto the surface of a substrate in the chamber.Suitable non-reactive gases include helium, nitrogen, neon, argon,krypton, and xenon. Preferably the carrier gas is selected from helium,argon and nitrogen, most preferably helium. The carrier gas may alsocomprise mixtures of the non-reactive gases.

[0029] The non-reactive gas, together with the organic platinum groupprecursor dissolved therein, is fed into the CVD deposition chamber at arate of about 50 to about 500 standard cubic centimeters per minute(“sccm”), more preferably from about 100 to about 250 sccm, mostpreferably about 200 sccm. The flow rate of the non-reactive gas to befed to the CVD deposition chamber is determined based on platinum groupmetal to be deposited as well as the substrate on which the metal is tobe deposited. The non-reactive gas flow rate may also vary dependingupon the temperature and pressure at which the deposition takes place,or the bubbler temperature.

[0030] The flow gas is fed to the CVD deposition chamber together withboth oxygen and nitrous oxide. The oxygen/nitrous oxide mixture includesfrom about 5% by volume to about 95% by volume of oxygen and from about95% by volume to about 5% by volume of nitrous oxide. Preferably the gasmixture includes from about 40% by volume to about 60% by volume ofoxygen and from about 60% by volume to about 40% by volume of nitrousoxide, most preferably about 50% by volume of oxygen and about 50% byvolume of nitrous oxide. The exact percentages of each gas to be fed tothe CVD deposition chamber is determined depending upon the platinumgroup metal to be deposited as well as the substrate on which the metalis to be deposited. The gas mixture may also vary depending upon thetemperature and pressure at which the deposition takes place. While notwishing to be bound by theory, it is believed that if the deposited filmis rough, the percentage of oxygen should be decreased and thepercentage of nitrous oxide in the mixture should be increased toprovide a continuous film.

[0031] The oxygen and nitrous oxide are fed to the CVD depositionchamber at a rate from about 1500 sccm to about 2500 sccm, dependingupon the mixture of the gases. Preferably the gases are fed in a 50/50mixture to the CVD deposition chamber. Thus, the rate at which the gasesare fed to the CVD chamber is preferably about 900 sccm oxygen and 900sccm nitrous oxide.

[0032] The temperature at which the CVD deposition process is operatedcan range from about 200° C. to about 600° C., preferably from about250° C. to about 300° C., most preferably about 275° C. The pressure atwhich the CVD deposition process is operated can range from about 1 toabout 1000 Torr. Preferably the pressure is from about 10 Torr to about50 Torr, most preferably about 15 to about 30 Torr. The temperature andpressure of the CVD deposition process depends upon the platinum groupmetal which is to be deposited as well as the substrate on which themetal is to be deposited as well as the other reaction parameters.

[0033] The CVD deposition of the invention is useful for depositing anyof the platinum group metals onto the surface of any substrate. Whilethe process is useful for deposition of the platinum group metal ontoany surface, the surface on which the platinum group metal is to bedeposited is preferably those materials found in the fabrication ofintegrated circuits. For example, a platinum group metal may bedeposited according to the invention onto borophosphosilicate glass(BPSG), silicon, TiN, Ti, oxides, polysilica glass (PSG), Si₃N₂,polysilicon or silicide.

[0034] The terms wafer or substrate used in the description include anysemiconductor-based structure having an exposed silicon surface in whichto form the contact electrode structure of this invention. Wafer andsubstrate are to be understood as including silison-on insulator (SOI)technology, silicon-on-sapphire (SOS) technology, doped and undopedsemiconductors, epitaxial layers of silicon supported by a basesemiconductor foundation, and other semiconductor structures.Furthermore, when reference is made to a wafer or substrate in thefollowing description, previous process steps may have been utilized toform regions/junctions in the base semiconductor structure orfoundation.

[0035] The method for CVD deposition a platinum group metal according tothe present invention may deposit a continuous film of the metal havinggood step coverage to a thickness of about 50 to about 1000 Angstroms,preferably about 500 to about 700 Angstroms. In order to deposit theplatinum group metal, the substrate should remain in the CVD depositionchamber for a time ranging from about 45 to about 1000 seconds,preferably from about 75 to about 150 seconds, most preferably about 100seconds. The time for the substrate to remain in CVD deposition chamberin accordance with the present invention will be determined based on theplatinum group metal which is to be deposited as well as the substrateon which the metal is to be deposited. The timing of the reaction isalso dependent upon the other reaction parameters, such as the flow rateof the saturated organic precursor flow gas, the temperature and thepressure at which reaction takes place or whether the injection of thematerials into the deposition apparatus is in liquid or gaseous form.

[0036] An exemplary apparatus used in the process for depositing aplatinum group metal according to one embodiment of the presentinvention is described below. It is to be understood, however, that thisapparatus is only one example of many possible different apparatusesthat may be used to deposit the platinum group metal by chemical vapordeposition according to the invention. The invention is not intended tobe limited by the particular apparatus described below.

[0037] Referring now to FIG. 1, the apparatus is generally indicated byreference number 10. The apparatus 10 includes an oxygen gas source 46which supplies oxygen to the apparatus 10 and a nitrous oxide gas source45 which provides nitrous oxide to the apparatus 10. The flow rate ofthe oxygen and nitrous oxide are controlled by flow controllers 12. Theflow controllers 12 enable the apparatus to vary the mixture of oxygenand nitrous oxide gas that is fed to the apparatus depending upon theother reaction coordinates, the metal to be deposited as well as thesurface onto which the metal is to be deposited. The nitrous oxide flowsthrough conduit 49 through the flow controller 12 and mixes with theoxygen, which is carried through conduit 47, into the vessel 20.

[0038] While the apparatus shows two gas sources 45 and 46, it should beunderstood that the apparatus may contain a single gas source where thedesired proportion of oxygen and nitrous oxide gases were mixed prior tothe gas source of the apparatus.

[0039] The apparatus 10 also includes a flow gas source 44. The flow gassource 44 provides flow gas into which the organic platinum group metalprecursor will be bubbled into for deposition in the CVD depositionchamber 50. The flow gas flows through conduit 51 past flow controller12 and into the vessel 20. The flow gas may be any noble gas which iscapable of carrying the organic platinum group metal precursor into thedeposition chamber, preferably the flow gas is helium, argon ornitrogen.

[0040] The flow gas flows through conduit 53 past the source bubbler 16where the flow gas becomes saturated with the organic platinum groupmetal precursor. The saturated flow gas is then mixed with oxygen andnitrous oxide and fed to the CVD deposition chamber 50 through conduit48. The gases flowing though conduit 48 are heated to a predeterminedtemperature by heater 22 before entering the CVD deposition chamber 50.The gas flows through nozzle 28 into the CVD deposition chamber 50. TheCVD deposition chamber is also heated to a predetermined reactiontemperature by heat source 34.

[0041] The temperature in the CVD deposition chamber 50 is measured by athermocouple 24 which is in contact with the substrate 26. Pressure inthe CVD deposition chamber 50 is controlled by the pump 30 and the pumpvalve 40. The pressure in the CVD deposition chamber can be determinedby the pressure gauge 18. A platinum group metal film is then depositedon the substrate 26 from the gas. Once the substrate 26 has been in theCVD deposition chamber 50 for a predetermined period of time, thesubstrate 26 is removed from the CVD deposition chamber 50.

[0042] The invention provides a method of deposition of platinum groupmetals in the presence of both oxygen and nitrous oxide. While notwishing to be bound by theory, it is believed that the addition of thenitrous oxide to the oxygen modulates the growth of the platinum groupmetal film. It is believed that this modulation of growth of the filmoccurs because the nitrous oxide is a weaker oxidizing agent than theoxygen and the combination of these two oxidizing gases modulates thegrowth of the platinum group metal film while reducing the carboncontent in the film. Thus the method creates a platinum group metal filmthat is both consistently smooth and has good step coverage.

[0043] The combination of good step coverage and a continuous film isuseful for deposition in integrated circuits, especially for the top andbottom electrode in a capacitor in a memory cell. In integrated circuitmanufacturing, there is continuous pressure to decrease the size ofindividual cells and increase memory cell density to allow more memoryto be squeezed onto a single memory chip.

[0044] However, it is necessary to maintain a sufficiently high storagecapacitance to maintain a charge at the refresh rates currently in useeven as cell size continues to shrink. This requirement has ledmanufacturers to turn to three dimensional capacitor designs, includingtrench and stacked capacitors. A particular type of stacked capacitor isa container capacitor. In a container capacitor, it is important thatthe material forming the electrode layers of the capacitor, specificallythe lower electrode, be consistently deposited with good step coverageso that the memory circuit can take advantage of the capacitance of thedeep container walls. The present invention provides a method forforming films of platinum based metals that can meet these requirements.

[0045] The invention is further explained with reference to thefollowing examples. This invention is not intended to be limited by theparticular examples described below.

EXAMPLE 1

[0046] Platinum was deposited onto an 8″ wafer in a 5000 L chamber byadding Me(Cp)PtTM under the following conditions: Temperature PressureO₂ N₂O (° C.) (Torr) (sccm) sccm 275 30 900 900

[0047] The platinum was deposited with a helium carrier flow rate of 200sccm for 100 seconds. This resulted in a continuous deposition ofplatinum on the wafer.

EXAMPLE 2

[0048] Platinum was deposited onto a silicon surface by addingMe(Cp)PtTM under the following conditions: Temperature Pressure O₂ N₂O(° C.) (Torr) (sccm) sccm 275 30 900 900

[0049] The platinum precursor was saturated with a helium carrier. Theplatinum was deposited with a helium carrier flow rate of 200 sccm for100 seconds. This resulted in a continuous deposition of platinum on thesilicon. The resultant film had a thickness of 175 Angstroms. Thecontinuous film can be seen in FIG. 2.

EXAMPLE 3

[0050] Platinum was deposited onto a BPSG surface by adding Me(Cp)PtTMunder the following conditions: Temperature Pressure O₂ N₂O (° C.)(Torr) (sccm) sccm 275 30 900 900

[0051] The platinum precursor was saturated with a helium carrier in thepresence of argon. The platinum was deposited with a helium carrier flowrate of 200 sccm for 150 seconds. This resulted in a continuousdeposition of platinum onto the BPSG. The resultant film had a thicknessof 298 Angstroms and a 69% step coverage.

COMPARATIVE EXAMPLE 1

[0052] Platinum was deposited onto a silicon surface by addingMe(Cp)PtTM under the following conditions: Temperature Pressure O₂ N₂O(° C.) (Torr) (sccm) sccm 400 15 900 0

[0053] The platinum precursor was saturated with a helium carrier. Theplatinum was deposited with a helium carrier flow rate of 200 sccm for120 seconds. This resulted in a rough deposition of platinum on thesilicon. The resultant rough film had a thickness of 960 Angstroms. Therough film can be seen in FIG. 3.

EXAMPLE 4

[0054] A lower electrode for a capacitor in a memory cell was formed ofplatinum according to the present invention.

[0055] Referring to FIG. 4, a semiconductor wafer fragment at an earlyprocessing step is indicated generally by reference numeral 100. Thesemiconductor wafer 100 is comprised of a bulk silicon substrate 112with field isolation oxide regions 114 and active areas 116, 118, 120formed therein. Word lines 122, 124, 126, 128 have been constructed onthe wafer 100 in a conventional manner. Each word line consists of alower gate oxide 130, a lower poly layer 132, a higher conductivitysilicide layer 134 and an insulating silicon nitride cap 136. Each wordline has also been provided with insulating spacers 138, which are alsocomposed of silicon nitride.

[0056] Referring now to FIG. 5, a thin layer 140 of nitride or TEOS(tetraethyl orthosilicate) is then provided atop the wafer 100. Next alayer of insulating material 142 is deposited. The insulating materialpreferably consists of BPSG.

[0057] The insulating layer 142 is subsequently planarized bychemical-mechanical polishing (CMP).

[0058] Referring now to FIG. 6, plug openings have been formed throughthe insulating layer 142. The plug openings 144 are formed through theinsulating layer 142 by photomasking and dry chemical etching the BPSGrelative to the thin nitride layer 140.

[0059] Referring now to FIG. 7, a conductive plug layer 146 is formed.An example of the material used to form conductive plug layer 146 is insitu arsenic or phosphorous doped poly. Referring now to FIG. 8, theconductive plug layer 146 is dry etched (or chemical-mechanicalpolished) to a point just below the upper surface of the BPSG layer 142such that the remaining material of the conductive plug layer 146 formselectrically isolated plugs 146 over the active areas 116, 118, 120.

[0060] Still with reference to FIG. 8, an additional layer 148 of BPSGis then deposited on the structure. Referring now to FIG. 9, capacitoropenings 150 are then formed in the BPSG layer 148 by photomasking anddry chemical etching. The height of the plugs, as defined by theconductive plug layer 146 over the non-bit line active areas 116, 120 isalso reduced by this step.

[0061] Referring now to FIG. 10, a platinum layer 152 that will form thelower electrode of the capacitor is deposited. The platinum layer 152 isdeposited by chemical vapor deposition. The platinum is deposited byflowing 200 sccm of helium past an organic platinum precursor ofMe(Cp)PtTM. The platinum is deposited in an atmosphere of 900 sccm O₂and 900 sccm N₂O at a temperature of about 275° C. and a pressure of 30Torr. The platinum is deposited with helium as the flow gas at a rate of200 sccm for 100 seconds. The process formed a continuous platinum layer152 with good step coverage.

[0062] Since the platinum layer 152 is resistant to oxidation itprovides an excellent surface for the deposition of the high dielectricconstant material. In addition, the platinum layer 152 protects the topsurface of the poly plug 146 from strong oxidizing conditions duringfurther deposition. Therefore platinum is used as the lower portion ofthe first electrode since it will not oxidize during subsequentdeposition, etches or anneals.

[0063] Referring to FIG. 11, the upper layer of the electrode 152 isremoved from the top surface of the BPSG layer 148. Preferably this isdone by CMP. A dielectric layer 153 is then deposited over the platinumlayer 152. The dielectric layer 153 may also be formed of any dielectricmaterial. A second electrode (not shown) is deposited over thedielectric layer 153 to complete the cell. Any suitable electrodematerial may be used, including but not limited to a platinum groupmetal deposited according to the present invention.

[0064] It should again be noted that although the invention has beendescribed with specific reference to DRAM memory circuits and containercapacitors, the invention has broader applicability and may be used inany integrated circuit requiring capacitors. Similarly, the processdescribed above is but one method of many that could be used.Accordingly, the above description and accompanying drawings are onlyillustrative of preferred embodiments which can achieve the features andadvantages of the present invention. It is not intended that theinvention be limited to the embodiments shown and described in detailherein. The invention is only limited by the spirit and scope of thefollowing claims.

What is claimed as new and desired to be protected by Letters Patent ofthe United States is:
 1. A method for depositing a platinum group metalon a substrate, comprising the steps of: depositing said platinum groupmetal onto a substrate in a CVD deposition chamber in the presence ofboth oxygen and nitrous oxide at a predetermined temperature andpressure.
 2. The method according to claim 1, wherein said platinumgroup metal is selected from the group consisting of Ru, Rh, Pd, Os, Irand Pt.
 3. The method according to claim 2, wherein said platinum basedmetal is Pt.
 4. The method according to claim 1, wherein saidpredetermined temperature is from about 200° C. to about 600° C.
 5. Themethod according to claim 1, wherein said predetermined pressure is fromabout 1 to about 1000 Torr.
 6. A method for depositing a platinum groupmetal on a substrate, comprising the steps of: introducing a substrateinto a CVD deposition chamber; bubbling a gas over an organic platinumbased metal precursor; introducing said gas and said organic platinumbased metal precursor to said CVD deposition chamber; introducing oxygento said CVD deposition chamber; introducing nitrous oxide to saiddeposition chamber; and depositing said platinum group metal onto saidsubstrate in said CVD deposition chamber at a predetermined temperatureand pressure.
 7. The method according to claim 6, wherein said gas is anon-reactive gas.
 8. The method according to claim 6, wherein saidorganic platinum based metal precursor is selected from the groupconsisting of cyclopentadienyl trimethylplatinum (IV) andmethylcyclopentadienyl trimethylplatinum CH₃(C₅H₅)Pt(CH₃)₃.
 9. Themethod according to claim 8, wherein said organic platinum based metalprecursor is methylcyclopentadienyl trimethylplatinum CH₃(C₅H₅)Pt(CH₃)₃.10. The method according to claim 6, wherein said predeterminedtemperature is from about 200° C. to about 600° C.
 11. The methodaccording to claim 6, wherein said predetermined pressure is from about1 to about 1000 Torr.
 12. The method according to claim 7, wherein saidnon-reactive gas is selected from the group consisting of nitrogen,helium, neon, argon, krypton, and xenon.
 13. The method according toclaim 12, wherein said non-reactive gas is selected from the groupconsisting of helium, argon and nitrogen
 14. The method according toclaim 13, wherein said non-reactive gas is helium.
 15. The methodaccording to claim 7, wherein said non-reactive gas is introduced intosaid CVD deposition chamber at a rate of about 50 to about 500 sccm. 16.The method according to claim 15, wherein said non-reactive gas isintroduced into said CVD deposition chamber at a rate of about 200 sccm.17. The method according to claim 6, wherein the ratio of oxygen:nitrousoxide in the CVD deposition chamber is from about 5:95::95:5.
 18. Themethod according to claim 17, wherein said ratio is from about46:60::60:40.
 19. The method according to claim 18, wherein said ratiois about 50:50.
 20. The method according to claim 6, wherein saidsubstrate is selected from the group consisting of BPSG, Si, TiN, Ti,oxides, PSG, Si₃N₂, polysilicon and silicide.
 21. The method accordingto claim 20, wherein said substrate is selected from the groupconsisting of BPSG and Si.
 22. The method according to claim 6, whereinsaid substrate is a capacitor for a memory cell.
 23. The methodaccording to claim 6, wherein said platinum based metal is depositedonto said substrate in said CVD deposition chamber for a time of about75 to about 150 seconds.
 24. The method according to claim 6, whereinsaid platinum based metal is deposited at a thickness of from about 50to about 1000 Angstroms.
 25. A method for depositing platinum onto asubstrate, comprising the steps of: introducing a substrate into a CVDdeposition chamber; bubbling a non-reactive gas over an organic platinumprecursor selected from the group consisting of cyclopentadienyltrimethylplatinum (IV) and methylcyclopentadienyl trimethylplatinumCH₃(C₅H₅)Pt(CH₃)₃; introducing said non-reactive gas and said organicplatinum precursor to said CVD deposition chamber; introducing a 50/50mixture by volume of oxygen and nitrous oxide to said CVD depositionchamber; depositing said platinum group metal onto said substrate insaid CVD deposition chamber at a temperature of from about 200 to about600° C. and pressure of from about 1 to about 1000 Torr to form acontinuous film on said substrate with good step coverage.
 26. Themethod according to claim 25, wherein said organic platinum precursor ismethylcyclopentadienyl trimethylplatinum CH₃(C₅H₅)Pt(CH₃)₃.
 27. Themethod according to claim 25, wherein said substrate is selected fromthe group consisting of BPSG, Si, TiN, Ti, oxides, PSG, Si₃N₂,polysilicon and silicide.
 28. The method according to claim 27, whereinsaid substrate is selected from the group consisting of BPSG and Si. 29.The method according to claim 28, wherein said substrate is a capacitorfor a memory cell.
 30. The method according to claim 25, wherein saidtemperature is about 275° C.
 31. The method according to claim 30,wherein said pressure is about 30 Torr.
 32. The method according toclaim 25, wherein platinum is deposited onto said substrate in said CVDdeposition chamber for a time of about 100 to about 120 seconds.
 33. Themethod according to claim 25, wherein said platinum based metal isdeposited at a thickness of about 500 Angstroms.
 34. The methodaccording to claim 254, wherein said non-reactive gas is selected fromthe group consisting of nitrogen, helium, neon, argon, krypton, andxenon.
 35. The method according to claim 34, wherein said non-reactivegas is helium.
 36. The method according to claim 25, wherein saidnon-reactive gas is introduced into said CVD deposition chamber at arate of about 200 sccm.
 37. A capacitor comprising: a first electrodeand a second electrode; a dielectric provided between said electrodes;and wherein at least one of said first and second electrodes is formedof a continuous platinum group metal formed in the presence of bothoxygen and nitrous oxide.
 38. The capacitor according to claim 37,wherein said electrode is formed of a material selected from the groupconsisting of Ru, Rh, Pd, Os, Ir and Pt.
 39. The capacitor according toclaim 37, wherein said electrode is platinum.
 40. The capacitoraccording to claim 39, wherein said platinum electrode is the lowerelectrode.
 41. A capacitor comprising: a first electrode and a secondelectrode; a dielectric provided between said electrodes; and wherein atleast one of said first and second electrodes is formed by depositingplatinum in a CVD deposition chamber in the presence of both oxygen andnitrous oxide at a predetermined temperature and pressure.
 42. Thecapacitor according to claim 41, wherein said temperature is from about250° C. to about 300° C.
 43. The capacitor according to claim 41,wherein said pressure is from about 15 to about 30 Torr.
 44. Thecapacitor according to claim 41, wherein said platinum electrode is thelower electrode.
 45. The capacitor according to claim 44, wherein saidplatinum electrode has a thickness of about 500 angstroms.